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La3Ga5SiO14 Piezoelecrictric Single Crystal LGS Wafer

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La3Ga5SiO14 Piezoelecrictric Single Crystal LGS Wafer

La3Ga5SiO14 Piezoelecrictric Single Crystal LGS Wafer
La3Ga5SiO14 Piezoelecrictric Single Crystal LGS Wafer La3Ga5SiO14 Piezoelecrictric Single Crystal LGS Wafer La3Ga5SiO14 Piezoelecrictric Single Crystal LGS Wafer

Large Image :  La3Ga5SiO14 Piezoelecrictric Single Crystal LGS Wafer

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: ROHS
Model Number: 1LGS30*30*0.3-B
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: Negotiable
Packaging Details: Transparent clean box
Delivery Time: 4 weeks
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 100 pcs per week
Detailed Product Description
Chemical Formula: La3Ga5SiO14 Size: 30*30*0.3mm
Polish: Single Side Orientation: (0,138.5,117)
Growth Method: Czochralski Hardness: 6.6 Moh's
Density: 5.754 G/cm3 Crystal Structure: Trigonal System
High Light:

La3Ga5SiO14 Single Crystal

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Trigonal system Piezoelecrictric Crystal

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Trigonal system LGS wafer


 

Introduction :

Lanthanum gallium silicate crystal is referred to as LGS, which is a kind of multifunctional crystal with excellent performance. The dielectric, elastic and piezoelectric constants of LGS crystals are significantly higher than those of quartz, and the electromechanical coupling coefficient is 2 to 3 times that of quartz. It can be used to manufacture surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices. At the same time, LGS crystals can be used to make electro-optical Q switches, and the effect is comparable to DKDP crystal Q switches. The devices using LGS crystal as the material all have higher thermal stability.

 

Main Advantages :

  • The electromechanical coupling coefficient is (3-4 times of quartz)
  • High thermal stability
  • The low equivalent series resistance ratio

 

Material Properties :

Crystal Structure regional system, group 33 a= 8.1783 c = 5.1014
Growth Method Czochralski
Hardness 6.6 Moh's
Density 5.754 g/cm3
Melt Point 1470 o C ( phase transition point: N/A)
Thermal expansion (x10-6/ oC) α 11: 5.10 α 33: 3.61
Acoustic velocity, SAW 2400 ( m/sec )
Frequency constant, BAW 1380 ( kHz/mm )
Piezoelectric coupling K2 (%) BAW: 2.21 SAW: 0.3
Dielectric Constant ε11/ε0=18.27   ε33/ε0=56.26
Piezoelectric Strain Constant d11=6.3 d14=5.4
Inclusions N0

 

 

Product Details :

La3Ga5SiO14 Piezoelecrictric Single Crystal LGS Wafer 0

 

 

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: Chen Dongdong

Tel: +86 18326013523

Fax: 86-551-63840588

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