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Product Name: | Ce:GAGG | Chemical Formula: | Ce:Gd3Al2Ga3O12 |
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Dimensions: | Dia6*8mm | Growth Method: | Czochralski |
Density: | 6.63g/cm3 | Melting Point: | 1850℃ |
Light Yield: | >50000 (Photons/MeV) | Emission Peak: | 540 Nm |
High Light: | ce doped GAGG Crystal,Scintillators GAGG Crystal,SGS gagg scintillator |
GAGG(Ce) doped with Ce is a newly developed scintillator. It is one of the brightest available scintillators with an emission peak at 520nm. GAGG(Ce) has good stopping power, is physically rugged, and well suited to a broad range of applications.
Apart from the high light yield, good energy resolution, high effective atomic number, fast scintillation response, chemical stability also ruggedness, and capability of large crystal growth are very important properties for Ce: GAGG crystals as well.
Crystro offers:
Orientation Tolerance | <0.5° |
Thickness/Diameter Tolerance | ±0.05mm |
Parallel | 30" |
Perpendicular | 15' |
Surface Quality | 10/5 |
Clear Aperture | >90% |
Chamfer | <0.1*45° |
Max Dimensions | MaxΦ 60mm |
Contact Person: Chen Dongdong
Tel: +86 18326013523
Fax: 86-551-63840588
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