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No Self Radiation φ1.5x5mm Cerium Doped GAGG Rods High Density

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China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
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No Self Radiation φ1.5x5mm Cerium Doped GAGG Rods High Density

No Self Radiation φ1.5x5mm Cerium Doped GAGG Rods High Density
No Self Radiation φ1.5x5mm Cerium Doped GAGG Rods High Density No Self Radiation φ1.5x5mm Cerium Doped GAGG Rods High Density No Self Radiation φ1.5x5mm Cerium Doped GAGG Rods High Density

Large Image :  No Self Radiation φ1.5x5mm Cerium Doped GAGG Rods High Density

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: ROHS
Model Number: 1GAGG1.5*5-E
Payment & Shipping Terms:
Minimum Order Quantity: 1 Piece
Price: Negotiable
Packaging Details: Carton Box
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram,Paypal
Supply Ability: 100 pcs per week
Detailed Product Description
Chemical Formula: Ce:Gd3Al2Ga3O12 Growth Method: Czochralski
Atomic Number: 54.4 Size: φ1.5*5mm
Density: 6.63g/cm3 Melting Point: 1850℃
Mohs Hardness: 8.0 Hygroscopic: No
Highlight:

Cerium Doped GAGG Rods

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5mm GAGG Rods

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Cerium Doped cagg crystal


High Energy Resolution φ1.5*5mm Cerium-Doped GAGG Crystal Rods

 

Introduction :

 

The cerium doped multicomponent Gadolinium Aluminum Gallium Garnet crystals referred to as Ce: GAGG with the chemical formula of Ce: Gd3Al2Ga3O12. It is one of the brightest available scintillators with an emission peak at 520nm. GAGG(Ce) has good stopping power, is physically rugged, and well suited to a broad range of applications:

  • Medical Imaging - PET, PEM, SPECT, and CT
  • Specialist applications in high energy, nuclear, space, and medical physics
  • Scanning electron microscopy (SEM)

 

 

 

Main Advantages:

  • High output
  • High energy resolution
  • High density
  • No self-radiation
  • No moisture release

 

 

 

 

Main Properties:

 

Property Value
Chemical Formula Ce:Gd3Al2Ga3O12
Atomic Number (Effective) 54.4
Growth Method Czochralski
Density 6.63g/cm3
Mohs Hardness 8
Melting Point 1850℃
Thermal Expansion Coeff. TBA x 10‾⁶

 

 

Crystro offers:

 

Orientation Tolerance <0.5°
Thickness/Diameter Tolerance ±0.05mm
Parallel 30"
Perpendicular 15'
Surface Quality 10/5
Clear Aperture >90%
Chamfer <0.1*45°
Max Dimensions MaxΦ 60mm

 

 

 

 

 

 

 

 

 

 

 

No Self Radiation φ1.5x5mm Cerium Doped GAGG Rods High Density 0

 

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: Zheng

Tel: +86 18255496761

Fax: 86-551-63840588

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