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Chemical Formula: | Ce:Gd3Al2Ga3O12 | Growth Method: | Czochralski |
---|---|---|---|
Atomic Number: | 54.4 | Size: | φ1.5*5mm |
Density: | 6.63g/cm3 | Melting Point: | 1850℃ |
Mohs Hardness: | 8.0 | Hygroscopic: | No |
Highlight: | Cerium Doped GAGG Rods,5mm GAGG Rods,Cerium Doped cagg crystal |
Introduction :
The cerium doped multicomponent Gadolinium Aluminum Gallium Garnet crystals referred to as Ce: GAGG with the chemical formula of Ce: Gd3Al2Ga3O12. It is one of the brightest available scintillators with an emission peak at 520nm. GAGG(Ce) has good stopping power, is physically rugged, and well suited to a broad range of applications:
Main Advantages:
Main Properties:
Property | Value |
---|---|
Chemical Formula | Ce:Gd3Al2Ga3O12 |
Atomic Number (Effective) | 54.4 |
Growth Method | Czochralski |
Density | 6.63g/cm3 |
Mohs Hardness | 8 |
Melting Point | 1850℃ |
Thermal Expansion Coeff. | TBA x 10‾⁶ |
Crystro offers:
Orientation Tolerance | <0.5° |
Thickness/Diameter Tolerance | ±0.05mm |
Parallel | 30" |
Perpendicular | 15' |
Surface Quality | 10/5 |
Clear Aperture | >90% |
Chamfer | <0.1*45° |
Max Dimensions | MaxΦ 60mm |
Contact Person: Zheng
Tel: +86 18255496761
Fax: 86-551-63840588
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