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Scintillator Material Gd3Al2Ga3O12 Cerium Doped GAGG Crystals

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Scintillator Material Gd3Al2Ga3O12 Cerium Doped GAGG Crystals

Scintillator Material Gd3Al2Ga3O12 Cerium Doped GAGG Crystals
Scintillator Material Gd3Al2Ga3O12 Cerium Doped GAGG Crystals Scintillator Material Gd3Al2Ga3O12 Cerium Doped GAGG Crystals

Large Image :  Scintillator Material Gd3Al2Ga3O12 Cerium Doped GAGG Crystals

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: ROHS
Model Number: 1Ce:GAGG10*10*0.5-B
Payment & Shipping Terms:
Minimum Order Quantity: 1 Piece
Price: Negotiable
Packaging Details: Carton Box
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram,Paypal
Supply Ability: 100 pcs per week
Detailed Product Description
Product Name: Cerium-Doped GAGG Chemical Formula: Ce:Gd3Al2Ga3O12
Growth Method: Czochralski Density: 6.63g/cm3
Atomic Number: 54.4 Mohs Hardness: 8.0
Melting Point: 1850℃ Hygroscopic: No
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Cerium Doped GAGG Crystals

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Inorganic GAGG Crystals

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ISO9001 inorganic scintillator


New inorganic scintillator Cerium-Doped Gd3Al2Ga3O12 Ce GAGG Crystals

 

Introduction :

 

The Gd3Al2Ga3O12 (Ce: GAGG) is a new inorganic scintillator known for its attractive properties such as high light yield, high density, and relatively fast decay time. The Gd3Al2Ga3O12 (Ce: GAGG) is a new inorganic scintillator known for its attractive properties such as high light yield, high density, and relatively fast decay time.

GAGG crystal commonly used for the detection of high-energy photons and particles. It could be a new scintillator material for such applications as X-ray computed tomography (CT), positron emission tomography (PET), and other medical imaging techniques, as well as in high energy and nuclear physics.

 

 

 

Main Advantages:

  • High output
  • High energy resolution
  • High density
  • No self-radiation
  • No moisture release

 

Main Application:

  • Medical Imaging - PET, PEM, SPECT, and CT
  • Specialist applications in high energy, nuclear, space, and medical physics
  • Scanning electron microscopy (SEM)

 

Main Properties:

 

Property Value
Chemical Formula Ce:Gd3Al2Ga3O12
Atomic Number (Effective) 54.4
Growth Method Czochralski
Density 6.63g/cm3
Mohs Hardness 8
Melting Point 1850℃
Thermal Expansion Coeff. TBA x 10‾⁶

 

 

Crystro offers:

 

Orientation Tolerance <0.5°
Thickness/Diameter Tolerance ±0.05mm
Parallel 30"
Perpendicular 15'
Surface Quality 10/5
Clear Aperture >90%
Chamfer <0.1*45°
Max Dimensions MaxΦ 60mm

 

 

 

 

 

 

 

 

 

 

 

Scintillator Material Gd3Al2Ga3O12 Cerium Doped GAGG Crystals 0

 

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: Chen Dongdong

Tel: +86 18326013523

Fax: 86-551-63840588

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