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Product Name: | Cerium-Doped GAGG | Chemical Formula: | Ce:Gd3Al2Ga3O12 |
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Growth Method: | Czochralski | Density: | 6.63g/cm3 |
Atomic Number: | 54.4 | Mohs Hardness: | 8.0 |
Melting Point: | 1850℃ | Hygroscopic: | No |
High Light: | Cerium Doped GAGG Crystals,Inorganic GAGG Crystals,ISO9001 inorganic scintillator |
Introduction :
The Gd3Al2Ga3O12 (Ce: GAGG) is a new inorganic scintillator known for its attractive properties such as high light yield, high density, and relatively fast decay time. The Gd3Al2Ga3O12 (Ce: GAGG) is a new inorganic scintillator known for its attractive properties such as high light yield, high density, and relatively fast decay time.
GAGG crystal commonly used for the detection of high-energy photons and particles. It could be a new scintillator material for such applications as X-ray computed tomography (CT), positron emission tomography (PET), and other medical imaging techniques, as well as in high energy and nuclear physics.
Main Advantages:
Main Application:
Main Properties:
Property | Value |
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Chemical Formula | Ce:Gd3Al2Ga3O12 |
Atomic Number (Effective) | 54.4 |
Growth Method | Czochralski |
Density | 6.63g/cm3 |
Mohs Hardness | 8 |
Melting Point | 1850℃ |
Thermal Expansion Coeff. | TBA x 10‾⁶ |
Crystro offers:
Orientation Tolerance | <0.5° |
Thickness/Diameter Tolerance | ±0.05mm |
Parallel | 30" |
Perpendicular | 15' |
Surface Quality | 10/5 |
Clear Aperture | >90% |
Chamfer | <0.1*45° |
Max Dimensions | MaxΦ 60mm |
Contact Person: Chen Dongdong
Tel: +86 18326013523
Fax: 86-551-63840588
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