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Chemical Formula: | Ce:Gd3Al2Ga3O12 | Growth Method: | Czochralski |
---|---|---|---|
Density: | 6.63g/cm3 | Melting Point: | 1850℃ |
Light Yield: | >50000 (Photons/MeV) | Emission Peak: | 520 Nm |
Energy Resolution: | <6% | Hygroscopic: | No |
High Light: | 520nm GAGG Single Crystal,Ce:Gd3Al2Ga3O12,Scintillation GAGG Single Crystal |
Ce: GAGG crystal has the characteristics of high density, high transmittance, large effective atomic number, high light yield, fast decay time, good energy resolution, and stable physical and chemical properties. Compared with traditional scintillation crystal materials, the comprehensive performance is more excellent, and the price and environmental advantages are extremely high. It has a wide range of applications in the fields of CT and PET/CT medical equipment, safety inspection, high energy physics, nuclear physics, etc.
Property | Value |
---|---|
Chemical Formula | Ce:Gd3Al2Ga3O12 |
Atomic Number (Effective) | 54.4 |
Growth Method | Czochralski |
Density | 6.63g/cm3 |
Mohs Hardness | 8 |
Melting Point | 1850℃ |
Thermal Expansion Coeff. | TBA x 10‾⁶ |
Contact Person: Zheng
Tel: +86 18255496761
Fax: 86-551-63840588
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