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Sensor Q Switch Lanthanum Gallium Silicate LGS Crystal dielectric

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Sensor Q Switch Lanthanum Gallium Silicate LGS Crystal dielectric

Sensor Q Switch Lanthanum Gallium Silicate LGS Crystal dielectric
Sensor Q Switch Lanthanum Gallium Silicate LGS Crystal dielectric Sensor Q Switch Lanthanum Gallium Silicate LGS Crystal dielectric

Large Image :  Sensor Q Switch Lanthanum Gallium Silicate LGS Crystal dielectric

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: ROHS
Model Number: CRLGS-9
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: Negotiable
Packaging Details: Transparent clean box
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram
Supply Ability: 100 pcs per week
Detailed Product Description
Product Name: Lanthanum Gallium Silicate (LGS) Chemical Formula: La3Ga5SiO14
Growth Method: Czochralski Hardness: 6.6 Moh's
Density: 5.754 G/cm3 Melt Point: 1470℃
Thermal-expansion Coefficient: α 11=5.10 α 33=3.61 Acoustic Velocity, SAW: 2400 ( M/sec )
Frequency Constant, BAW: 1380 ( KHz/mm ) Temperature Frequency Coefficient: 1.6х10-5
High Light:

Q Switch LGS Crystal

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sensor LGS Crystal

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Q Switch Lanthanum Gallium Silicate


 

Lanthanum Gallium Silicate Crystal For Electro-Optic Q-Switch

Introduction :

Lanthanum gallium silicate crystal is referred to as LGS, which is a kind of multifunctional crystal with excellent performance. The dielectric, elastic and piezoelectric constants of LGS crystals are significantly higher than those of quartz, and the electromechanical coupling coefficient is 2 to 3 times that of quartz, which can be used to manufacture surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices. At the same time, LGS crystal can be used to make electro-optic Q switches, and the effect is comparable to that of DKDP crystal Q switches. The devices using LGS crystal as the material all have higher thermal stability.

Material Properties :

 

Crystal Structure rigonal system, group 33 a= 8.1783 c = 5.1014
Growth Method Czochralski
Hardness 6.6 Moh's
Density 5.754 g/cm3
Melt Point 1470 o C ( phase transition point: N/A)
Thermal expansion (x10-6/ oC) α 11: 5.10 α 33: 3.61
Acoustic velocity, SAW 2400 ( m/sec )
Frequency constant, BAW 1380 ( kHz/mm )
Piezoelectric coupling K2 (%) BAW: 2.21 SAW: 0.3
Dielectric Constant ε11/ε0=18.27 ε33/ε0=56.26
Piezoelectric Strain Constant d11=6.3 d14=5.4
Inclusions N0


 

Main Application :

  • Electro-optic Q-switch
  • SAW device /BAW device
  • Sensor
  • High power high repetition rate all-solid-state laser
  • High and low temperature change laser

 

 

 

Sensor Q Switch Lanthanum Gallium Silicate LGS Crystal dielectric 0

 

 

 

 

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: Chen Dongdong

Tel: +86 18326013523

Fax: 86-551-63840588

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