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High Photon Yield Scintillation Material Flavescent Ce GAGG Crystal

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High Photon Yield Scintillation Material Flavescent Ce GAGG Crystal

High Photon Yield Scintillation Material Flavescent Ce GAGG Crystal
High Photon Yield Scintillation Material Flavescent Ce GAGG Crystal High Photon Yield Scintillation Material Flavescent Ce GAGG Crystal High Photon Yield Scintillation Material Flavescent Ce GAGG Crystal

Large Image :  High Photon Yield Scintillation Material Flavescent Ce GAGG Crystal

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: SGS
Model Number: CRGAGG-5
Payment & Shipping Terms:
Minimum Order Quantity: 1 Piece
Price: Negotiable
Packaging Details: Carton Box
Delivery Time: 4 weeks
Payment Terms: T/T, Western Union, MoneyGram,Paypal
Supply Ability: 100 pcs per week
Detailed Product Description
Product Name: Ce:GAGG Chemical Formula: Ce:Gd3Al2Ga3O12
Growth Method: Czochralski Density: 6.63g/cm3
Melting Point: 1850℃ Light Yield: >50000 (Photons/MeV)
Emission Peak: 540 Nm Energy Resolution: <6%
High Light:

Ce GAGG Crystal

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GAGG Flavescent Crystal

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Scintillation Material GAGG Crystal

High Photon Yield Scintillation Material flavescent crystal GAGG(Ce)

 

   GAGG(Ce) doped with Ce is a newly developed scintillator. It is one of the brightest available scintillators with an emission peak at 520nm. GAGG(Ce) has good stopping power, is physically rugged, and well suited to a broad range of applications.

Apart from the high light yield, good energy resolution, high effective atomic number, fast scintillation response, chemical stability also ruggedness, and capability of large crystal growth are very important properties for Ce: GAGG crystals as well.

 

 

Features :

  • High output :>50000 (Photons/MeV)
  • High density: Good absorbers with good stopping powers
  • High energy resolution
  • Emission peak around 520 nm

 

Main Application:

  • Medical Imaging - PET, PEM, SPECT, and CT
  • Specialist applications in high energy, nuclear, space, and medical physics
  • Scanning electron microscopy (SEM)

 

Material Properties:

Property Value
Chemical Formula Ce:Gd3Al2Ga3O12
Atomic Number (Effective) 54.4
Growth Method Czochralski
Density 6.63g/cm3
Mohs Hardness 8
Melting Point 1850℃
Thermal Expansion Coeff. TBA x 10‾⁶

 

 

Product details:

High Photon Yield Scintillation Material Flavescent Ce GAGG Crystal 0

 

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: Chen Dongdong

Tel: +86 18326013523

Fax: 86-551-63840588

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