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| Product Name: | GAGG(Ce) | Chemical Formula: | Ce:Gd3Al2Ga3O12 |
|---|---|---|---|
| Growth Method: | Czochralski | Mohs Hardness: | 8.0 |
| Density: | 6.63g/cm3 | Melting Point: | 1850℃ |
| Dimensions: | MaxΦ60mm | Structure: | Cubic,Ia3d |
| High Light: | GAGG Scintillation Material,Ce GAGG Crystal,LED Lighting GAGG Crystal |
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Ce: GAGG is a relatively new single-crystal scintillator with many properties, such as high light yield, high density, good energy resolution, good emission peak matching with silicon sensor, and low intrinsic energy resolution. In addition, this material is no-hygroscopic and no self-radiative, which is widely used in PET, PEM, SPECT, X-ray and γ-ray detection, and so on.
Material Properties :
| Property | Value |
|---|---|
| Chemical Formula | Ce:Gd3Al2Ga3O12 |
| Atomic Number (Effective) | 54.4 |
| Growth Method | Czochralski |
| Density | 6.63g/cm3 |
| Mohs Hardness | 8 |
| Melting Point | 1850℃ |
| Thermal Expansion Coeff. | TBA x 10‾⁶ |
Main Application:
Crystro offers:
| Orientation Tolerance | ＜0.5° |
| Thickness/Diameter Tolerance | ±0.05mm |
| Parallel | 10‘’ |
| Perpendicular | 5' |
| Surface Quality | 10/5 |
| Clear Aperture | ＞90% |
| Chamfer | ＜0.2*45° |
| Max Dimensions | MaxΦ 60mm |
Contact Person: Chen Dongdong
Tel: +86 18326013523
Fax: 86-551-63840588
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