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| Product Name: | Cerium-Doped GAGG | Chemical Formula: | Ce:Gd3Al2Ga3O12 |
|---|---|---|---|
| Growth Method: | Czochralski | Density: | 6.63g/cm3 |
| Atomic Number: | 54.4 | Mohs Hardness: | 8.0 |
| Melting Point: | 1850℃ | Hygroscopic: | No |
| Highlight: | Ce GAGG Scintillator Crystals,Ce GAGG Scintillator,GAGG Gadolinium Aluminium Gallium Garnet |
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Introduction :
Ce: GAGG is a relatively new single-crystal scintillator with many properties, such as high light yield, high density, good energy resolution, good emission peak matching with silicon sensor, and low intrinsic energy resolution. In addition, this material is no-hygroscopic and no self-radiative, which is widely used in PET, PEM, SPECT, X-ray and γ-ray detection, and so on.
Main Advantages:
Main Application:
Main Properties:
| Property | Value |
|---|---|
| Chemical Formula | Ce:Gd3Al2Ga3O12 |
| Atomic Number (Effective) | 54.4 |
| Growth Method | Czochralski |
| Density | 6.63g/cm3 |
| Mohs Hardness | 8 |
| Melting Point | 1850℃ |
| Thermal Expansion Coeff. | TBA x 10‾⁶ |
Crystro offers:
| Orientation Tolerance | ＜0.5° |
| Thickness/Diameter Tolerance | ±0.05mm |
| Parallel | 30" |
| Perpendicular | 15' |
| Surface Quality | 10/5 |
| Clear Aperture | ＞90% |
| Chamfer | ＜0.1*45° |
| Max Dimensions | MaxΦ 60mm |
Contact Person: Zheng
Tel: +86 18255496761
Fax: 86-551-63840588
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