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Ce Doped Gadolinium Aluminium Gallium Garnet Ce GAGG Scintillator Crystals

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Ce Doped Gadolinium Aluminium Gallium Garnet Ce GAGG Scintillator Crystals

Ce Doped Gadolinium Aluminium Gallium Garnet Ce GAGG Scintillator Crystals
Ce Doped Gadolinium Aluminium Gallium Garnet Ce GAGG Scintillator Crystals Ce Doped Gadolinium Aluminium Gallium Garnet Ce GAGG Scintillator Crystals Ce Doped Gadolinium Aluminium Gallium Garnet Ce GAGG Scintillator Crystals

Large Image :  Ce Doped Gadolinium Aluminium Gallium Garnet Ce GAGG Scintillator Crystals

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: ISO9001
Model Number: CRGAGG-2
Payment & Shipping Terms:
Minimum Order Quantity: 1 Piece
Price: Negotiable
Packaging Details: Carton Box
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram,Paypal
Supply Ability: 100 pcs per week
Detailed Product Description
Product Name: Cerium-Doped GAGG Chemical Formula: Ce:Gd3Al2Ga3O12
Growth Method: Czochralski Density: 6.63g/cm3
Atomic Number: 54.4 Mohs Hardness: 8.0
Melting Point: 1850℃ Hygroscopic: No
High Light:

Ce GAGG Scintillator Crystals

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Ce GAGG Scintillator

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GAGG Gadolinium Aluminium Gallium Garnet


Ce Doped Gadolinium Aluminium Gallium Garnet Ce GAGG Scintillator Crystals

 

Introduction :

 

Ce: GAGG is a relatively new single-crystal scintillator with many properties, such as high light yield, high density, good energy resolution, good emission peak matching with silicon sensor, and low intrinsic energy resolution. In addition, this material is no-hygroscopic and no self-radiative, which is widely used in PET, PEM, SPECT, X-ray and γ-ray detection, and so on.

 

 

 

Main Advantages:

  • High output
  • High energy resolution
  • High density
  • No self-radiation
  • No moisture release

 

Main Application:

  • Medical Imaging - PET, PEM, SPECT, and CT
  • Specialist applications in high energy, nuclear, space, and medical physics
  • Scanning electron microscopy (SEM)

 

Main Properties:

 

Property Value
Chemical Formula Ce:Gd3Al2Ga3O12
Atomic Number (Effective) 54.4
Growth Method Czochralski
Density 6.63g/cm3
Mohs Hardness 8
Melting Point 1850℃
Thermal Expansion Coeff. TBA x 10‾⁶

 

 

Crystro offers:

 

Orientation Tolerance <0.5°
Thickness/Diameter Tolerance ±0.05mm
Parallel 30"
Perpendicular 15'
Surface Quality 10/5
Clear Aperture >90%
Chamfer <0.1*45°
Max Dimensions MaxΦ 60mm

 

 

 

 

 

 

 

 

 

 

 

Ce Doped Gadolinium Aluminium Gallium Garnet Ce GAGG Scintillator Crystals 0

 

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: Zheng

Tel: +86 18255496761

Fax: 86-551-63840588

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