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Product Name: | Ce:GAGG | Chemical Formula: | Ce:Gd3Al2Ga3O12 |
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Growth Method: | Czochralski | Atomic Number: | 54.4 |
Density: | 6.63g/cm3 | Melting Point: | 1850℃ |
Hygroscopic: | No | Cleavage: | No |
Highlight: | Ce GAGG Scintillation Crystals,Single Scintillation GAGG Crystal,High Energy Resolution GAGG Crystal |
GAGG(Ce) doped with Ce is a newly developed scintillator. It is one of the brightest available scintillators with an emission peak at 520nm. GAGG(Ce) has good stopping power, is physically rugged, and well suited to a broad range of applications.
Apart from the high light yield, good energy resolution, high effective atomic number, fast scintillation response, chemical stability also ruggedness, and capability of large crystal growth are very important properties for Ce: GAGG crystals as well.
Main Advantages:
Main Application:
Property | Value |
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Chemical Formula | Ce:Gd3Al2Ga3O12 |
Atomic Number (Effective) | 54.4 |
Growth Method | Czochralski |
Density | 6.63g/cm3 |
Mohs Hardness | 8 |
Melting Point | 1850℃ |
Thermal Expansion Coeff. | TBA x 10‾⁶ |
Contact Person: Chen Dongdong
Tel: +86 18326013523
Fax: 86-551-63840588
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