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High Energy Resolution Scintillation Single Ce GAGG Crystal

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High Energy Resolution Scintillation Single Ce GAGG Crystal

High Energy Resolution Scintillation Single Ce GAGG Crystal
High Energy Resolution Scintillation Single Ce GAGG Crystal High Energy Resolution Scintillation Single Ce GAGG Crystal High Energy Resolution Scintillation Single Ce GAGG Crystal

Large Image :  High Energy Resolution Scintillation Single Ce GAGG Crystal

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: ISO9001
Model Number: CRGAGG-1
Payment & Shipping Terms:
Minimum Order Quantity: 1 Piece
Price: Negotiable
Packaging Details: Carton Box
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram,Paypal
Supply Ability: 100 pcs per week
Detailed Product Description
Product Name: Ce:GAGG Chemical Formula: Ce:Gd3Al2Ga3O12
Growth Method: Czochralski Atomic Number: 54.4
Density: 6.63g/cm3 Melting Point: 1850℃
Hygroscopic: No Cleavage: No
High Light:

Ce GAGG Scintillation Crystals

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Single Scintillation GAGG Crystal

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High Energy Resolution GAGG Crystal

 

Ce Doped Gadolinium Aluminium Gallium Garnet Ce: GAGG Crystals

 

 

GAGG(Ce) doped with Ce is a newly developed scintillator. It is one of the brightest available scintillators with an emission peak at 520nm. GAGG(Ce) has good stopping power, is physically rugged, and well suited to a broad range of applications.

Apart from the high light yield, good energy resolution, high effective atomic number, fast scintillation response, chemical stability also ruggedness, and capability of large crystal growth are very important properties for Ce: GAGG crystals as well.

 

 

 

Main Advantages:

  • High output
  • High energy resolution
  • High density
  • No self-radiation
  • No moisture release

 

 

Main Application:

  • Medical Imaging - PET, PEM, SPECT and CT
  • Specialist applications in high energy, nuclear, space and medical physics
  • Scanning electron microscopy (SEM)

 

 

Main Properties:

Property Value
Chemical Formula Ce:Gd3Al2Ga3O12
Atomic Number (Effective) 54.4
Growth Method Czochralski
Density 6.63g/cm3
Mohs Hardness 8
Melting Point 1850℃
Thermal Expansion Coeff. TBA x 10‾⁶

 

High Energy Resolution Scintillation Single Ce GAGG Crystal 0

 

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: Chen Dongdong

Tel: +86 18326013523

Fax: 86-551-63840588

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