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| Product Name: | LSAT Substrate | Size: | 10*10*1mm |
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| Polish: | SSP Or DSP | Growth Method: | Czochralski |
| Density: | 6.74 G/cm3 | Hardness: | 6.5 Mohs |
| Melting Point: | 1840 ℃ | Lattice Parameters: | A= 3.868A |
| Permittivity: | ε = 22 | ||
| Highlight: | 10*10*1mm Single Crystal Substrate,Thin Film Optical Substrate,10*10*1mm LSAT Substrate |
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LSAT crystals are grown by the Czochralski method and typically used as a substrate for epitaxial growth of thin films in ferroelectric and high-temperature superconductor devices. It is expected to replace lanthanum aluminate (LaAlO3) and strontium titanate (SrTiO3) substrate, which is used for epitaxial oxide thin films for magnetic ferro-electronic and superconductive devices.
| Crystal Structure | Cubic | Polishing | Single side / double side |
| Density | 6.74 g/cm3 | Orientation | <100><110><111> |
| Hardness | 6.5 Mohs | Dimension | 10*10*0.5 mm,20*20*0.5 mm |
| Lattice Parameters | a= 3.868A | 10*10*1 mm, 20*20*1mm | |
| Melting Point | 1840 ℃ | Ra: | ≤5Å(5µm×5µm) |
| Redirection the edge | 2°(special in 1°) | Customized | Special size and orientation are available for request |
Contact Person: Chen Dongdong
Tel: +86 18326013523
Fax: 86-551-63840588
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