Laser Systems Pockels Cell Electro Optic EO Q Switch

High Damage Threshold Electro-Optic (EO) Q-Switch Pockels Cell For Laser Systems

LGS crystal has a wide range of applications: In addition to the piezoelectric effect and optical rotation effect, its electro-optic effect performance is also very superior. High repetition rate, large cross-sectional clear aperture, narrow pulse width, high power, high and low temperature, etc. LGS crystal electro-optic Q Switches are applicable. We use LGS crystal’s electro-optic coefficient γ11 to make Q-switches and choose a larger aspect ratio to reduce the half-wave voltage of Q-switches. It can be applied to electro-optic Q-switching of all-solid-state lasers with higher power repetition rates.

Features:

• LGS -based Q-switch (Pockels cell);
• For wavelengths up to 3.2μm;
• Transmitted Wavefront Distortion: < l/4;
• Damage threshold: >900MW/cm² (@1064nm, 10ns, typical, not guaranteed);
• LGS available for medium power systems, partially take place of DKDP and LiNbO₃ series Q-switches.

Main Properties:

Product details :