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High Damage Threshold LGS Pockels Cell Electro Optic EO Q Switch

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High Damage Threshold LGS Pockels Cell Electro Optic EO Q Switch

High Damage Threshold LGS Pockels Cell Electro Optic EO Q Switch
High Damage Threshold LGS Pockels Cell Electro Optic EO Q Switch High Damage Threshold LGS Pockels Cell Electro Optic EO Q Switch High Damage Threshold LGS Pockels Cell Electro Optic EO Q Switch

Large Image :  High Damage Threshold LGS Pockels Cell Electro Optic EO Q Switch

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: SGS
Model Number: CRQSW-2
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: Negotiable
Packaging Details: Carton Box
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram,Paypal
Supply Ability: 100 pcs per week
Detailed Product Description
Name: LGS Q-switch Chemical Formula: La3Ga5SiQ14
Density: 5.75 G/cm3 Melting Point: 1470 °C
Refractive Index: 1.89 Deliquescence: No
Resistivity: 1.7×1010 Ω·cm Crystal Structure: Trigonal; A=b=7.453Å,c=6.293Å
Transparency Range: 242 - 3200 Nm Electro-Optic Coefficients: γ41=1.8 Pm/V, γ11=2.3 Pm/V
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Electro Optic EO Q Switch

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LGS Electro Optic Q Switch

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LGS EO Q Switch


 

 

High Damage Threshold LGS Crystal Series Electro-Optic EO Q-Switch Pockels Cell

 

Introduction :

LGS Series Electro-optic (EO) Q-switch Pockels Cell is a new kind of EO Q-switch, which is designed by use of a La3Ga5SiQ14(LGS) crystal. LGS crystal is one kind of optically material with a very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high-temperature stability The LGS (LG-EO-Q)series Q-switch(Pockels Cell) is a practical electro-optic device that can be used in medium output energy lasers to partially take the place of DKDP, RTPand LiNb03 series Q-switches.

 

 

Features :

  • For wavelengths up to 3.2μm;
  • Transmitted Wavefront Distortion: < l/4;
  • Damage threshold: >900MW/cm2 (@1064nm, 10ns);
  • LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.

 

Main Properties :

 

Chemical Formula La3Ga5SiQ14
Crystal Structure Trigonal; a=b=7.453Å,c=6.293Å
Density 5.75 g/cm3
Melting Point 1470 °C
Transparency Range 242 - 3200 nm
Refractive Index 1.89
Electro-Optic Coefficients γ41=1.8 pm/V, γ11=2.3 pm/V
Resistivity 1.7×1010 Ω·cm
Deliquescence No
Thermal Expansion Coefficients α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)

 

Product details :

High Damage Threshold LGS Pockels Cell Electro Optic EO Q Switch 0

 

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: Chen Dongdong

Tel: +86 18326013523

Fax: 86-551-63840588

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