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D12mm Langasite Electro Optic Device LGS Pockels Cell EO Q Switch

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D12mm Langasite Electro Optic Device LGS Pockels Cell EO Q Switch

D12mm Langasite Electro Optic Device LGS Pockels Cell EO Q Switch
D12mm Langasite Electro Optic Device LGS Pockels Cell EO Q Switch D12mm Langasite Electro Optic Device LGS Pockels Cell EO Q Switch D12mm Langasite Electro Optic Device LGS Pockels Cell EO Q Switch

Large Image :  D12mm Langasite Electro Optic Device LGS Pockels Cell EO Q Switch

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: SGS
Model Number: CRQSW-4
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: Negotiable
Packaging Details: Carton Box
Delivery Time: 4 weeks
Payment Terms: T/T, Western Union, MoneyGram,Paypal
Supply Ability: 100 pcs per week
Detailed Product Description
Name: LGS Q-switch Chemical Formula: La3Ga5SiQ14
Density: 5.75 G/cm3 Melting Point: 1470 °C
Refractive Index: 1.89 Deliquescence: No
Resistivity: 1.7×1010 Ω·cm Crystal Structure: Trigonal; A=b=7.453Å,c=6.293Å
Transparency Range: 242 - 3200 Nm Electro-Optic Coefficients: γ41=1.8 Pm/V, γ11=2.3 Pm/V
High Light:

12mm LGS Pockels Cell

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12mm EO Q Switch

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LGS EO Q Switch


 

 

Langasite Electro-Optic Device LGS Pockels Cell EO Q-Switched For Laser Systems

Introduction :

LGS electro-optic Q-switch is actually a new type of rotary electro-optic Q-switch. Due to the existence of the optical rotation effect, it can be used as a practical switching device to obtain a good Q-switching effect. LGS crystal broadens the exploration and discovery of new types of electro-optic crystals from optically active crystals.

 

 

 

Main Properties :

 

Chemical Formula La3Ga5SiQ14
Crystal Structure Trigonal; a=b=7.453Å,c=6.293Å
Density 5.75 g/cm3
Melting Point 1470 °C
Transparency Range 242 - 3200 nm
Refractive Index 1.89
Electro-Optic Coefficients γ41=1.8 pm/V, γ11=2.3 pm/V
Resistivity 1.7×1010 Ω·cm
Deliquescence No
Thermal Expansion Coefficients α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)

 

 

Advantages :

  • For wavelengths up to 3.2μm;
  • Transmitted Wavefront Distortion: < l/4;
  • Damage threshold: >900MW/cm2 (@1064nm, 10ns);
  • LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.

 

Product details :

 

D12mm Langasite Electro Optic Device LGS Pockels Cell EO Q Switch 0

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: Chen Dongdong

Tel: +86 18326013523

Fax: 86-551-63840588

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