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LGS EO Q LGS Electro Optic Pockel Cell Q Switch

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LGS EO Q LGS Electro Optic Pockel Cell Q Switch

LGS EO Q LGS Electro Optic Pockel Cell Q Switch
LGS EO Q LGS Electro Optic Pockel Cell Q Switch LGS EO Q LGS Electro Optic Pockel Cell Q Switch LGS EO Q LGS Electro Optic Pockel Cell Q Switch

Large Image :  LGS EO Q LGS Electro Optic Pockel Cell Q Switch

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: SGS
Model Number: CRQSW-7
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: Negotiable
Packaging Details: Carton Box
Delivery Time: 4 weeks
Payment Terms: T/T, Western Union, MoneyGram,Paypal
Supply Ability: 100 pcs per week
Detailed Product Description
Product Name: LGS Q-switch Chemical Formula: La3Ga5SiQ14
Density: 5.75g/cm3 Melting Point: 1470 °C
Deliquescence: No Refractive Index: 1.89
Structure: Trigonal; A=b=7.453Å,c=6.293Å Resistivity: 1.7×1010 Ω·cm
Electro-Optic Coefficients: γ41=1.8 Pm/V, γ11=2.3 Pm/V Transparency Range: 242-3200nm
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Electro Optic Q Switched Device

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LGS Pockel Cell Q Switch

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LGS Electro Optic Q Switch


 

 

 

Langasite Electro-Optic Device LGS Pockels Cell EO Q-Switched For Laser Systems

 

Introduction :

The LGS (LG-EO-Q) series Q-switch (Pockels Cell) is a practical electro-optic device that can be used in medium output energy lasers to partially take the place of DKDP and LiNbO3 series Q-switches. LGS crystal is one kind of optically active NLO material with a very high damage threshold (about 9 times that of LN), excellent E-O coefficient, high-temperature stability (better than quartz). Compared with the DKDP switch, it is not deliquescent, has good temperature stability, and can be used in harsh environments. It is an electro-optical switch with excellent performance that can meet different application fields.

 
 

Main Properties :

 

Chemical Formula La3Ga5SiQ14
Crystal Structure Trigonal; a=b=7.453Å,c=6.293Å
Density 5.75 g/cm3
Melting Point 1470 °C
Transparency Range 242 - 3200 nm
Refractive Index 1.89
Electro-Optic Coefficients γ41=1.8 pm/V, γ11=2.3 pm/V
Resistivity 1.7×1010 Ω·cm
Deliquescence No
Thermal Expansion Coefficients α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)

 
 

Advantages :

  • For wavelengths up to 3.2μm;
  • Transmitted Wavefront Distortion: < l/4;
  • Damage threshold: >900MW/cm2 (@1064nm, 10ns);
  • LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.

 

Product details :

 

LGS EO Q LGS Electro Optic Pockel Cell Q Switch 0

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