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| Product Name: | Lanthanum Strontium Aluminum Tantalum Oxide | Chemical Formula: | (La,Sr)(Al,Ta)O3 |
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| Density: | 6.74 G/cm3 | Melting Point: | 1840 ℃ |
| Lattice Parameters: | A= 3.868A | Hardness: | 6.5 Mohs |
| Crystal Structure: | Cubic | Dielectric Constant: | 22 |
| High Light: | LSAT Thin Film Substrate,Thin Film Substrate,LSAT Optical Substrate |
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LSAT(Strontium tantalum lanthanum aluminate) is an excellent perovskite crystal, can be grown by the Czochralski method. It is well-matched with high-temperature superconductors and other oxide materials. It is expected to replace lanthanum aluminate (LaAlO3) and strontium titanate (SrTiO3) substrate, which is used for epitaxial oxide thin films for magnetic ferro-electronic and superconductive devices.
| Crystal Structure | Cubic | Polishing | Single side / double side |
| Density | 6.74 g/cm3 | Orientation | <100><110><111> |
| Hardness | 6.5 Mohs | Dimension | 10*10*0.5 mm,20*20*0.5 mm |
| Lattice Parameters | a= 3.868A | 10*10*1 mm, 20*20*1mm | |
| Melting Point | 1840 ℃ | Ra: | ≤5Å(5µm×5µm) |
| Redirection the edge | 2°(special in 1°) | Customized | Special size and orientation are available for request |
Contact Person: Chen Dongdong
Tel: +86 18326013523
Fax: 86-551-63840588
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