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| Product Name: | Aluminum Oxide | Chemical Formula: | Al2O3 |
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| Density: | 3.97 G/cm3 | Hardness: | 9 Mohs |
| Lattice Parameters: | A = 4.758 Å C =12.99 Å | Thermal Expansion Coefficient (/ ℃): | 7.5 × 10^-6 |
| Dielectric Constants: | 9.4 @300K At A Axis -11.58@ 300K At Caxis | Crystal Structure: | M6 |
| High Light: | Al2O3 Sapphire Wafer,Sapphire Substrate Wafer,Al2O3 Single Crystal Substrate |
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Thin Film Substrate Aluminum Oxide Al2O3 Single Crystal Substrate Sapphire Wafer
Introduction:
Al2O3(Aluminum Oxide) is an excellent superconducting thin film substrate. This material has many advantages: good thermos-stability,
high thermal conductivity, and high hardness. It also could be used in many other fields like industrial, defense and security and scientific research.
| Crystal Structure | M6 | Melting Point | 2040℃ |
| Density | 3.98 g/cm3 | Polishing | Single side/double side polished |
| Hardness | 9.0 (Mohs) | Redirection the edge | 2°(special in 1°) |
| Lattice Parameters | a = 4.758 Å c =12.99 Å | Ra | ≤5Å(5µm×5µm) |
| Orientation |
A-plane <11-20> M-plane <10-10> R-plane <1-102> C-plane <0001> |
Size |
5*5*0.5mm 10*10*0.5mm |
Contact Person: Chen Dongdong
Tel: +86 18326013523
Fax: 86-551-63840588
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