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10mm X 10mm X 0.5mm Semiconductor Epitaxial Film Growing GGG Crystal

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China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
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10mm X 10mm X 0.5mm Semiconductor Epitaxial Film Growing GGG Crystal

10mm X 10mm X 0.5mm Semiconductor Epitaxial Film Growing GGG Crystal
10mm X 10mm X 0.5mm Semiconductor Epitaxial Film Growing GGG Crystal 10mm X 10mm X 0.5mm Semiconductor Epitaxial Film Growing GGG Crystal 10mm X 10mm X 0.5mm Semiconductor Epitaxial Film Growing GGG Crystal

Large Image :  10mm X 10mm X 0.5mm Semiconductor Epitaxial Film Growing GGG Crystal

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: ROHS
Model Number: 1GGG10*10*0.5-B
Payment & Shipping Terms:
Minimum Order Quantity: 1 Piece
Price: Negotiable
Packaging Details: Carton Box
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram,Paypal
Supply Ability: 100 pcs per week
Detailed Product Description
Production Name: GGG Substrate Chemical Formula: Gd3Ga5O12
Lattic Parameter: A=12.376Å Dimensions: 10mm X 10mm X 0.5mm
Density: 7.13g/cm3 Mohs Hardness: 8.0
Melting Point: 1725℃ Refractive Index: 1.954 At 1064nm
Orientation: (111) Polish: One Side Polished
High Light:

Epitaxial Film Growing GGG Crystal

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Semiconductor Epitaxial GGG Crystal

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Semiconductor Epitaxial GGG Substrate


 

GGG 10mm X 10mm X 0.5mm Substrate For Semiconductor Epitaxial Film Growing

 

 

GGG substrate, Gadolinium gallium garnet (GGG) is dedicated substrates for the magneto-optical film. In optical communication devices, require a lot of using 1.3μ and 1.5μ optical isolator, Its core component is the YIG or BIG film been placed in a magnetic field. GGG single crystal substrates of different tangential, which can achieve the best lattice match with this magneto-optical material, Thus ensuring the YIG, BIG film epitaxial growth be successful.
GGG has good physical and mechanical properties and chemical stability. GGG is the best substrate material for made microwave isolators.

 

 

Main Advantages:

 

Large dimensions,from 2.8 to 76mm.

Low optical losses (<0.1%/cm)

High thermal conductivity (7.4W m-1K-1).

High laser damage threshold (>1GW/cm2)

 

 

Main Properties:

 

Chemical Formula Gd3Ga5O12
Lattice Parameter a=12.376Å
Growth Method Czochralski
Density 7.13g/cm3
Mohs Hardness 8.0
Melting Point 1725℃
Refractive Index 1.954 at 1064nm

 

 

 

 

 

 

 

 

 

CRYSTRO can offer:

 

Orientation [111] within ±15 arc min
Wave Front Distortion <1/4 wave@632
Diameter Tolerance ±0.05mm
Length Tolerance ±0.2mm
Chamfer 0.10mm@45º
Flatness <1/10 wave at 633nm
Parallelism < 30 arc Seconds
Perpendicularity < 15 arc min
Surface Quality 10/5 Scratch/Dig
Clear Aperture >90%
Large Dimensions of Crystals 2.8-76 mm in diameter
 

Product Picture:

10mm X 10mm X 0.5mm Semiconductor Epitaxial Film Growing GGG Crystal 0

 

 

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: Chen Dongdong

Tel: +86 18326013523

Fax: 86-551-63840588

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