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Product Details:
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| Product Name: | Lanthanum Aluminate Crystal | Growth Method: | Czochralski |
|---|---|---|---|
| Crystal Orientation: | ＜100＞ ＜110＞ ＜111＞ | Diameter: | 76.2mm |
| Thickness: | 1.0 Mm | Density: | 6.52 (g/cm 3) |
| Hardness: | 6-6.5（mohs） | Melting Point (℃): | 2080℃ |
| Thermal Expansion: | 9.4x10-6/℃ | ||
| High Light: | 76.2mm LaAlO3 Crystal,SGS LaAlO3 Crystal,lanthanum aluminate Crystal |
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Diameter 76.2mm Lanthanum Aluminate LaAlO3 Crystal Wafer
Lanthanum aluminate (LaAlO3) single crystal is currently the most important industrialized, large-size single-crystal material for high-temperature superconducting thin film substrates. LaAlO3 crystal matches well with a variety of perovskite structure materials and is the substrate material for epitaxial growth of high-temperature superconducting films and giant magnetoresistive films.
At the same time, lanthanum aluminate crystal has a low dielectric constant and good microwave dielectric properties, so it is suitable for low-loss microwave amplifiers and dielectric resonance applications.
| Crystal Structure | Cubic |
| Growth Method |
Czochralski method |
| Density |
6.52(g/cm3) |
| Melt Point | 2080℃ |
| Hardness | 6.5 Mohs |
|
Thermal expansion |
9.2 × 10^-6 |
|
Dielectric constants |
24 |
|
Secant loss(10ghz) |
~ 3 × 10 -4 @ 300k, ~ 0.6 × 10 -4 @ 77k |
|
Color and appearance |
Transparent to brown based on annealing condition |
| Size | Max Φ 76.2mm (3''inches) |
| Thickness | 0.5mm /1.0 mm |
| Polishing | Single or Double |
| Crystal Orientation |
＜100＞ ＜110＞ ＜111＞ |
|
Redirection precision |
±0.5° |
|
Redirection the edge |
2°(special in 1°) |
|
Angle of crystalline |
Special size and orientation are available upon request |
| Ra |
≤5Å(5µm×5µm) |
| Pack |
Class100 clean bag,Class 1000 clean bag |
Contact Person: Zheng
Tel: +86 18255496761
Fax: 86-551-63840588
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