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ROHS 6.52g/Cm3 Low Dielectric Constant LaAlO3 Wafer 0.5mm Thickness

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ROHS 6.52g/Cm3 Low Dielectric Constant LaAlO3 Wafer 0.5mm Thickness

Name: ROHS 6.52g/Cm3 Low Dielectric Constant LaAlO3 Wafer 0.5mm Thickness
Brand: Crystro
SKU: CRLAO-10
Rating: 5 (196 reviews)

Large Image : ROHS 6.52g/Cm3 Low Dielectric Constant LaAlO3 Wafer 0.5mm Thickness

Product Details:

Place of Origin:	China
Brand Name:	Crystro
Certification:	SGS/ROHS
Model Number:	CRLAO-10

Payment & Shipping Terms:

Minimum Order Quantity:	1
Price:	Negotiable
Packaging Details:	Transparent clean box
Delivery Time:	3-4 weeks
Payment Terms:	T/T, Western Union, MoneyGram,paypal
Supply Ability:	100 pcs per week

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Detailed Product Description

Chemical Formula:	LaAlO3	Growth Method:	Czochralski
Color And Appearance:	From Brown To Brownish	Thermal Expansion:	9.4x10-6/℃
Density:	6.52g/cm³	Hardness:	6.5 Mohs
Melting Point (℃):	2080℃	Permittivity:	ε = 21
High Light:	Low Dielectric Constant LaAlO3 Wafer , 6.52g/cm3 LaAlO3 Wafer , ROHS LaAlO3 Wafer

Low Dielectric Constant LaAlO3 Crystal Lanthanum Aluminate Crystal

1. LaAlO3 Introduction :

LaAlO3 (Lanthanum aluminate) single crystal can provide good lattice matching for many perovskite structure materials.

It is an excellent substrate for epitaxial growth of high-temperature superconductors (HTS), magnetic, and ferroelectric thin films. Crystro offers high-quality LaAlO3 Crystal (Max φ76.2mm).

2.Specifications:

Size	Max Φ 76.2mm (3''inches)
Thickness	0.5mm /1.0 mm
Polishing	Single or Double
Crystal Orientation	＜100＞＜110＞＜111＞
Redirection precision	±0.5°
Redirection the edge	2°(special in 1°)
Angle of crystalline	Special size and orientation are available upon request
Ra	≤5Å(5µm×5µm)
Pack	Class100 clean bag,Class 1000 clean bag

3. Main Features of LaAlO3 :

good chemical stability
Good lattice match most materials with Perovskite structure
Low dielectric constant
Low microwave loss

4.Applications :

High-Temperature Superconducting, magnetic, and ferroelectric thin films
Low loss microwave applications
Dielectric resonance applications

ROHS 6.52g/Cm3 Low Dielectric Constant LaAlO3 Wafer 0.5mm Thickness 0

Tag:

Contact Person: Zheng

Tel: +86 18255496761

Fax: 86-551-63840588

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Melting point (℃): 2080℃

High Temperature Superconducting Single Crystal LaAlO3 LAO Substrate

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Product Name: Lanthanum Aluminate

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Diameter 3 Inches Lanthanum Aluminate LaAlO3 Wafer

Name: Lanthanum Aluminate Crystal

Growth method: Czochralski

Crystal Orientation: ＜100＞＜110＞＜111＞

Thickness: 0.5mm /1.0 mm

Lanthanum Aluminate Crystal Optical Substrate LaAlO3 Crystal

Name: Lanthanum Aluminate Crystal

chemical formula: LaAlO3

Density: 6.52 (g/cm 3)

Hardness: 6-6.5（mohs）

ROHS 6.52g/Cm3 Low Dielectric Constant LaAlO3 Wafer 0.5mm Thickness

ROHS 6.52g/Cm3 Low Dielectric Constant LaAlO3 Wafer 0.5mm Thickness

Low Dielectric Constant LaAlO3 Wafer

6.52g/cm3 LaAlO3 Wafer

ROHS LaAlO3 Wafer

Low Dielectric Constant LaAlO3 Crystal Lanthanum Aluminate Crystal

1. LaAlO3 Introduction :

2.Specifications:

3. Main Features of LaAlO3 :

4.Applications :

LaAlO3 Optical Substrate,

Thin Film Optical Substrate,

LaAlO3 Single Crystal Substrate