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Product Name: | LaAlO3 Substrates | Crystal Orientation: | <100> <110> <111> |
---|---|---|---|
Thickness: | 0.5mm /1.0mm | Polishing: | SSP OR DSP |
Melting Point (℃): | 2080℃ | Density: | 6.52 (g/cm 3) |
Redirection Precision: | ±0.2° | Redirection The Edge: | 2°(special In 1°) |
High Light: | LaAlO3 Crystal Wafer,Lanthanum aluminate Substrates,Lanthanum aluminate Wafer |
LaAIO3 is a high temperature superconducting single crystal substrate. It is well-matched with YBaCuO high-temperature superconducting thin film materials in a lattice with lower dielectric constant, low loss microwave. The dielectric properties of LaAlO3 crystal are well suitable for high-temperature superconducting microwave electronic devices.
Crystal Structure | Cubic |
Growth Method |
Czochralski method |
Density |
6.52(g/cm3) |
Melt Point | 2080℃ |
Hardness | 6.5 Mohs |
Thermal expansion |
9.2 × 10^-6 |
Dielectric constants |
24 |
Secant loss(10ghz) |
~ 3 × 10 -4 @ 300k, ~ 0.6 × 10 -4 @ 77k |
Color and appearance |
Transparent to brown based on annealing condition |
Size | Max Φ 76.2mm (3''inches) |
Thickness | 0.5mm /1.0 mm |
Polishing | Single or Double |
Crystal Orientation |
<100> <110> <111> |
Redirection precision |
±0.5° |
Redirection the edge |
2°(special in 1°) |
Angle of crystalline |
Special size and orientation are available upon request |
Ra |
≤5Å(5µm×5µm) |
Pack |
Class100 clean bag,Class 1000 clean bag |
Contact Person: Zheng
Tel: +86 18255496761
Fax: 86-551-63840588
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