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Name: | SGGG Crystal | Density: | 7.09g/cm3 |
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Mohs Hardness: | 7.5 | Melting Point: | 1730℃ |
Lattic Parameter: | A=12.497Å | Refractive Index: | 1.954 At 1064nm |
Size: | Dia 40 Mm | Polish: | SSP OR DSP |
High Light: | Low Optical Loss SGGG Crystal,High Thermal Conductivity SGGG Crystal,Single Crystal Wafer SGGG |
SGGG and GGG are used as substrates for liquid epitaxy. Substituted gadolinium gallium garnet (SGGG) crystals with calcium, magnesium, and zirconium as substituting ions have been used as substrates for bismuth-substituted iron garnet epitaxial films.
Name | Substituted GGG |
Crystal Structure | Cubic |
Lattice Parameter | a=12.497Å |
Growth Method | Czochralski |
Density | 7.09g/cm3 |
Mohs Hardness | 7.5 |
Melting Point | 1730℃ |
Refractive Index | 1.954 at 1064nm |
SIze | MAX Dia 4 inches |
Thickness | 0.5mm/ 1mm |
Polishing | Single or Double side |
Orientation | <111>±0.2° |
Edge Orientation accuracy | 2°(special in 1°) |
Cutting | Special size and orientation are available upon request |
Ra | ≤1nm |
Package |
100 clean bag,1000 clean bag
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Contact Person: Zheng
Tel: +86 18255496761
Fax: 86-551-63840588
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