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Product Details:
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| Product Name: | Lanthanum Aluminate | Chemical Formula: | LaAlO3 |
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| Growth Method: | Czochralski | Crystal Orientation: | ＜100＞ ＜110＞ ＜111＞ |
| Thickness: | 0.5mm /1.0 Mm | Polishing: | Single Or Double |
| Density: | 6.52 (g/cm 3) | Hardness: | 6-6.5（mohs） |
| Melting Point (℃): | 2080℃ | Thermal Expansion: | 9.4x10-6/℃ |
| High Light: | Single LaAlO3 Crystal,Lanthanum Aluminate LaAlO3 Crystal,Lanthanum Aluminate Substrates |
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LaAIO3 is a high temperature superconducting single crystal substrate. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.
| Crystal Structure | Cubic |
| Growth Method | Czochralski method |
| Density | 6.52(g/cm3) |
| Melt Point | 2080℃ |
| Hardness | 6.5 Mohs |
| Thermal expansion | 9.2 × 10^-6 |
| Dielectric constants | 24 |
| Secant loss(10ghz) | ~ 3 × 10 -4 @ 300k, ~ 0.6 × 10 -4 @ 77k |
| Color and appearance | Transparent to brown based on annealing condition |
| Size | Max Φ 76.2mm (3''inches) |
| Thickness | 0.5mm /1.0 mm |
| Polishing | Single or Double |
| Crystal Orientation | ＜100＞ ＜110＞ ＜111＞ |
| Redirection precision | ±0.5° |
| Redirection the edge | 2°(special in 1°) |
| Angle of crystalline | Special size and orientation are available upon request |
| Ra | ≤5Å(5µm×5µm) |
| Pack | Class100 clean bag,Class 1000 clean bag |
Contact Person: Zheng
Tel: +86 18255496761
Fax: 86-551-63840588
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