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Product Details:
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| Production Name: | Substituted Gadolinium Gallium Garnet | Lattic Parameter: | A=12.497Å |
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| Growth Method: | CZ Method | Crystal Structure: | Cubic |
| Density: | 7.09g/cm3 | Mohs Hardness: | 7.5 |
| Melting Point: | 1730℃ | Refractive Index: | 1.954 At 1064nm |
| High Light: | Dia 40mm SGGG Single Crystal Wafer,SGGG Single Crystal Wafer,Single Crystal SGGG Wafer |
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Dia 40mm SGGG Single Crystal Wafer For Epitaxial Thin Films
Introduction :
SGGG single crystal, (substituted gadolinium gallium garnet ) is grown by the Czochralski method. SGGG substrate is excellent for growing bismuth-substituted iron garnet epitaxial films.
Main Advantages:
Main Properties:
| Name | Substituted GGG |
| Crystal Structure | Cubic |
| Lattice Parameter | a=12.497Å |
| Growth Method | Czochralski |
| Density | 7.09g/cm3 |
| Mohs Hardness | 7.5 |
| Melting Point | 1730℃ |
| Refractive Index | 1.954 at 1064nm |
CRYSTRO Offers:
| SIze | MAX Dia 4 inches |
| Thickness | 0.5mm/ 1mm |
| Polishing | Single or Double side |
| Orientation | <111>±0.2° |
| Edge Orientation accuracy | 2°(special in 1°) |
| Cutting | Special size and orientation are available upon request |
| Ra | ≤1nm |
| Package | 100 clean bag,1000 clean bag |
Contact Person: Zheng
Tel: +86 18255496761
Fax: 86-551-63840588
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