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Ferro Electric Thin Films LaAlO3 Lanthanum Aluminate Wafer Substrate

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Ferro Electric Thin Films LaAlO3 Lanthanum Aluminate Wafer Substrate

Ferro Electric Thin Films LaAlO3 Lanthanum Aluminate Wafer Substrate
Ferro Electric Thin Films LaAlO3 Lanthanum Aluminate Wafer Substrate Ferro Electric Thin Films LaAlO3 Lanthanum Aluminate Wafer Substrate Ferro Electric Thin Films LaAlO3 Lanthanum Aluminate Wafer Substrate

Large Image :  Ferro Electric Thin Films LaAlO3 Lanthanum Aluminate Wafer Substrate

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: SGS
Model Number: CRLAO-3
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: Negotiable
Packaging Details: Transparent clean box
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram,paypal
Supply Ability: 100 pcs per week
Detailed Product Description
Name: Lanthanum Aluminate Crystal Chemical Formula: LaAlO3
Growth Method: Czochralski Crystal Orientation: <100> <110> <111>
Thickness: 0.5mm /1.0 Mm Polishing: Single Or Double
Density: 6.52 (g/cm 3) Hardness: 6-6.5(mohs)
Melting Point (℃): 2080℃ Thermal Expansion: 9.4x10-6/℃
High Light:

Ferro Electric LaAlO3 Wafer Substrate

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LaAlO3 Wafer Substrate

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Ferro Electric LaAlO3 Crystal


 

 

LAO Substrates LaAlO3 High-Temperature Superconducting Substrates Material

 

 

Introduction :

LaAIO3 is a high temperature superconducting single crystal substrate. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.

 

 

Main Features :

  • good chemical stability
  • Good lattice match most materials with Perovskite structure
  • Low dielectric constant
  • Low microwave loss

Applications :

  •  High-Temperature Superconducting, magnetic ,and ferroelectric thin films
  •  Low loss microwave applications
  •  Dielectric resonance applications

 

Material Properties :

Crystal Structure Cubic
Growth Method

Czochralski method

Density

6.52(g/cm3)

Melt Point 2080℃
Hardness 6.5 Mohs

Thermal expansion

9.2 × 10^-6

Dielectric constants

24

Secant loss(10ghz)

~ 3 × 10 -4 @ 300k, ~ 0.6 × 10 -4 @ 77k

Color and appearance

Transparent to brown based on annealing condition

 

 

 

 

 

 

 

 

 

 

 

 

Crystro offers :

Size  Max Φ 76.2mm (3''inches)
Thickness 0.5mm /1.0 mm
Polishing Single or Double
Crystal Orientation

<100> <110> <111>

Redirection precision

±0.5°

Redirection the edge

2°(special in 1°)

Angle of crystalline

Special size and orientation are available upon request

Ra

≤5Å(5µm×5µm)

Pack

Class100 clean bag,Class 1000 clean bag

 

 

 

 

 

 

 

 

 

 

 

Ferro Electric Thin Films LaAlO3 Lanthanum Aluminate Wafer Substrate 0

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: Zheng

Tel: +86 18255496761

Fax: 86-551-63840588

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