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Product Details:
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| Chemical Formula: | LiTaO₃ | Growth Method: | Czochralski |
|---|---|---|---|
| Crystal Structure: | Trigonal | Density: | 7.45g/cm3 |
| Curie Temperature: | 603±2℃ | Hardness: | 5.5-6 Mohs |
| Melting Point: | 1650℃ | Lattice Constant: | A=5.154Å,c=13.783Å |
| Transmission Range: | 400-5000nm | 400-5000nm: | R33=30.4 |
| High Light: | Orientation Lithium Tantalate Crystal,Customized Lithium Tantalate Crystal,Substrate Wafer Lithium Tantalate Crystal |
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Customized Orientation LT Lithium Tantalate LiTaO3 Crystal Substrate Wafer
Introduction:
As a typical multi-functional single crystal material, lithium tantalate (LiTaO3 or LT) exhibits its excellent electro-optical, piezoelectric properties and has now been widely applied to many applications, such as electro-optical modulators, pyroelectric detectors, optical waveguide, piezoelectric transducers and SAW (surface acoustic wave) substrates.
Polished LT wafer is widely used in the manufacturing of resonators, filters, transducers, and other electronic communication devices, especially for its good mechanical and electrical coupling, temperature coefficient, and other comprehensive performance and is used in manufacturing high-frequency acoustic surface wave devices, and applied in many mobile phones, intercom, satellite communication, aerospace, and other communication fields.
Main Advantages:
High Curie temperature point
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Crystal Structure |
Trigonal |
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Lattice Constant |
a=5.154Å,c=13.783Å |
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Density |
7.45g/cm3 |
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Melting Point |
1650℃ |
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Curie Point |
603±2℃ |
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Mohs Hardness |
5.5-6 Mohs |
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Thermal Conductivity |
1015wm |
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Refractive Indices |
n0=2.176 ne=2.180 @ 633mn |
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E-O Coefficient |
R33=30.4 |
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Transmission Range |
400-5000nm |
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Pyroelectric Coefficient |
2.3×10-7 C/cm2/K |
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Electromechanical Coupling Factor |
R15≥0.3 |
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Thermal Expansion Coefficient |
a1=a2=1.61×10-6/℃, a3=4.1×10-6/℃ |
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Dielectric Constant |
es11/eo:39~43, es33/eo:42~43；et11/eo:51~54, et33/eo:43~46 |
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Size |
4" ,6" Boule or wafer, Acoustic or Optical grade |
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Doping |
No Doping or With Fe |
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Boule Length |
≥50mm |
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Wafer Thickness |
Thickness 0.25,0.35,0.50(mm) |
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Orientation |
Y42°/Y36°/X/Y/Z or Upon Request |
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Surface Process |
Single/Double Sides Polishing |
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TTV |
< 10µm |
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BOW |
± (25µm ~40um ) |
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Warp |
≤35µm |
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Flat Width |
32.0±2.0(mm) or Upon Request |
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Roughness |
Ra≤10Å |
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Chamfer |
≤0.1mm@45° |
Contact Person: Chen Dongdong
Tel: +86 18326013523
Fax: 86-551-63840588
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