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Chemical Formula: | LiTaO₃ | Growth Method: | Czochralski |
---|---|---|---|
Crystal Structure: | Trigonal | Density: | 7.45g/cm3 |
Curie Temperature: | 603±2℃ | Hardness: | 5.5-6 Mohs |
Melting Point: | 1650℃ | Lattice Constant: | A=5.154Å,c=13.783Å |
Transmission Range: | 400-5000nm | 400-5000nm: | R33=30.4 |
High Light: | LiTaO3 Wafers Crystal Material,Optical Communication Lithium Tantalate Crystal |
Multi-Functional Crystal Material LiTaO3 Wafers For Optical Communication Devices
Introduction:
LiTaO3 Lithium Tantalate (LT) crystal is an important multifunctional crystal material with excellent piezoelectric, ferroelectric,acoustic-optical, and
electro-optical effects. Therefore, it has become a basic functional material in the field of acoustic surface wave (SAW) devices, optical communication, laser, and optoelectronics. Polished LT wafer is widely used in the manufacturing of resonators, filters, transducers, and other electronic communication devices, especially for its good mechanical and electrical coupling, temperature coefficient, and other comprehensive performance and is used in manufacturing high-frequency acoustic surface wave devices, and applied in many mobile phones, intercom, satellite communication, aerospace, and other communication fields.
Advantages:
Crystal Structure |
Trigonal |
Lattice Constant |
a=5.154Å,c=13.783Å |
Density |
7.45g/cm3 |
Melting Point |
1650℃ |
Curie Point |
603±2℃ |
Mohs Hardness |
5.5-6 Mohs |
Thermal Conductivity |
1015wm |
Refractive Indices |
n0=2.176 ne=2.180 @ 633mn |
E-O Coefficient |
R33=30.4 |
Transmission Range |
400-5000nm |
Pyroelectric Coefficient |
2.3×10-7 C/cm2/K |
Electromechanical Coupling Factor |
R15≥0.3 |
Thermal Expansion Coefficient |
a1=a2=1.61×10-6/℃, a3=4.1×10-6/℃ |
Dielectric Constant |
es11/eo:39~43, es33/eo:42~43;et11/eo:51~54, et33/eo:43~46 |
Size |
4" ,6" Boule or wafer ,Acoustic or Optical grade |
Doping |
No Doping or With Fe |
Boule Length |
≥50mm |
Wafer Thickness |
Thickness 0.25,0.35,0.50(mm) |
Orientation |
Y42°/Y36°/X/Y/Z or Upon Request |
Surface Process |
Single/Double Sides Polishing |
TTV |
< 10µm |
BOW |
± (25µm ~40um ) |
Warp |
≤35µm |
Flat Width |
32.0±2.0(mm) or Upon Request |
Roughness |
Ra≤10Å |
Chamfer |
≤0.1mm@45° |
Contact Person: Chen Dongdong
Tel: +86 18326013523
Fax: 86-551-63840588
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